The 2SD669 is an NPN plastic-encapsulated bipolar transistor designed for low-frequency power amplification, typically used in complementary pairs with the 2SB649. It is packaged in a TO-126 case measuring 7.400 to 7.800 mm in length, 10.600 to 11.000 mm in width, and 15.300 to 15.700 mm in lead length. The collector-base voltage is 180 V, the collector-emitter voltage is 150 V, and the emitter-base voltage is 6 V. The continuous collector current is 1.5 A, with a power dissipation of 1.6 W. The junction and storage temperature range is -55℃ to +150℃. The DC current gain (hFE) ranges from 60 to 250 at VCE=5 V and IC=0.1 A. The collector-emitter saturation voltage is 0.5 V at IC=1.5 A and IB=0.15 A. The transition frequency is 50 MHz.
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The 2SD669 is an NPN plastic-encapsulated bipolar transistor designed for low-frequency power amplification, typically used in complementary pairs with the 2SB649. It is packaged in a TO-126 case measuring 7.400 to 7.800 mm in length, 10.600 to 11.000 mm in width, and 15.300 to 15.700 mm in lead length. The collector-base voltage is 180 V, the collector-emitter voltage is 150 V, and the emitter-base voltage is 6 V. The continuous collector current is 1.5 A, with a power dissipation of 1.6 W. The junction and storage temperature range is -55℃ to +150℃. The DC current gain (hFE) ranges from 60 to 250 at VCE=5 V and IC=0.1 A. The collector-emitter saturation voltage is 0.5 V at IC=1.5 A and IB=0.15 A. The transition frequency is 50 MHz.
