EVVO Semi Single Bipolar Transistors 2SC5696

Silicon NPN power transistor designed for display horizontal deflection output, switching regulators, and general-purpose switching applications; features a built-in damper diode and is 100% avalanche tested. Packaged in a TO-220 case, it has a collector-base voltage rating of 1600 V, collector-emitter voltage of 800 V, continuous collector current of 12 A, and power dissipation of 85 W at TC=25℃. Junction temperature ranges from -55℃ to 150℃. DC current gain (hFE) is 3 to 11 at IC=1 A and 4 to 7 at IC=8 A. Collector-emitter saturation voltage is 3 V at IC=7.2 A and IB=1.8 A. Emitter-base voltage is rated at 5 V.