EVVO Semi Single Bipolar Transistors 2SC3856

NPN silicon power transistor paired with 2SA1492 for high-fidelity audio amplification, packaged in TO-3PN. Rated for a collector-emitter voltage of 180 V, collector current of 15 A, and power dissipation of 130 W at Tc=25℃. Feature a transition frequency greater than 20 MHz and collector-emitter saturation voltage of 2.0 V at IC=5 A and IB=0.5 A. Operating junction temperature ranges from -55℃ to 150℃. Thermal resistance from junction to case is 0.35 ℃/W.