EVVO Semi Single Bipolar Transistors 2SB817

2SB817 is a PNP silicon bipolar epitaxial planar power transistor paired with 2SD1047 for high-fidelity audio amplifier output stages. It is packaged in a TO-3PN case with dimensions of 15.2-16.0 mm in length, 13.2-13.6 mm in width, and 19.8-20.2 mm in height. The device has a collector-emitter voltage rating of 140 V, collector current of 12 A, and power dissipation of 120 W at Tc=25℃. Junction temperature ranges from -55℃ to 150℃. Features include transition frequency >10 MHz and collector-emitter saturation voltage of 0.3-2.0 V at 5 A. The part meets no specified industry standards.