EVVO Semi Single Bipolar Transistors 2SA1939

2SA1939 is a PNP silicon bipolar epitaxial planar power transistor paired with the 2SC5196 NPN transistor for high-fidelity audio amplifier output stages. It is packaged in a TO-3PS case with dimensions of 15.1 to 15.9 mm in E, 13.1 to 13.6 mm in E1, and 19.8 to 20.2 mm in H. It supports a collector-emitter voltage of 80 V, a collector current of 6 A, and a power dissipation of 60 W at Tc=25°C. The junction temperature can reach up to 150°C. It has a transition frequency greater than 30 MHz and a collector-emitter saturation voltage between 1.0 and 2.0 V at Ic=5 A and Ib=-0.5 A. The transistor is designed for continuous operation under high temperature, voltage, and current conditions.