EVVO Semi Single Bipolar Transistors 2SA1386A

The 2SA1386A is a PNP silicon bipolar epitaxial planar power transistor paired with the 2SC3519A NPN transistor for high-fidelity audio amplifier output stages. It is packaged in a TO-3PN case, with dimensions ranging from 15.2 to 16.0 mm in width and 19.8 to 20.2 mm in height. The device supports a continuous collector current of 15 A, a collector-emitter voltage of 180 V, and a power dissipation of 130 W at Tc=25°C. The junction temperature rating is 150°C, with a storage temperature range of -55°C to 150°C. The transition frequency exceeds 40 MHz, and the collector-emitter saturation voltage is 2.0 V at 5 A collector current. The thermal resistance from junction to case is 0.35°C/W.