Etron Technology, Inc. Memory EM6HE08EW9G-10H

Description
4GB (512MX8) DDR3. 78-BALL WINDO
Datasheet
Description
4GB (512MX8) DDR3. 78-BALL WINDO
Datasheet

Suppliers

Company
Product
Description
Supplier Links
4GB (512MX8) DDR3. 78-BALL WINDO

4GB (512MX8) DDR3. 78-BALL WINDO

Supplier's Site Datasheet
Memory - EM6HE08EW9G-10H - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (7.5x10.6)

SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (7.5x10.6)

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Integrated Circuits (ICs) - Memory - Memory - EM6HE08EW9G-10H - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
EM6HE08EW9G-10H
Integrated Circuits (ICs) - Memory - Memory EM6HE08EW9G-10H
IC DRAM 4GBIT PAR 78FBGA

IC DRAM 4GBIT PAR 78FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM6HE08EW9G-10H EM6HE08EW9G-10H EM6HE08EW9G-10H
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 20 ns 20 ns
Density 4000000 kbits 4000000 kbits 4000000 kbits
Operating Temperature 0 to 95 C (32 to 203 F)
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