Etron Technology, Inc. Memory EM6GC08EWUG-10IH

Description
SDRAM - DDR3 Memory IC 1Gbit Parallel 933 MHz 20 ns 78-FBGA (8x10.5)
Datasheet
Description
SDRAM - DDR3 Memory IC 1Gbit Parallel 933 MHz 20 ns 78-FBGA (8x10.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - EM6GC08EWUG-10IH - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3 Memory IC 1Gbit Parallel 933 MHz 20 ns 78-FBGA (8x10.5)

SDRAM - DDR3 Memory IC 1Gbit Parallel 933 MHz 20 ns 78-FBGA (8x10.5)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - EM6GC08EWUG-10IH - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
EM6GC08EWUG-10IH
Integrated Circuits (ICs) - Memory - Memory EM6GC08EWUG-10IH
IC DRAM 1GBIT PAR 78FBGA

IC DRAM 1GBIT PAR 78FBGA

Supplier's Site
IC DRAM 1GBIT PARALLEL 78FBGA

IC DRAM 1GBIT PARALLEL 78FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM6GC08EWUG-10IH EM6GC08EWUG-10IH EM6GC08EWUG-10IH
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 20 ns 20 ns
Operating Temperature -40 to 95 C (-40 to 203 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - A2C00057906 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
 - 9403ASDMQB - Rochester Electronics
Specs
Memory Category FIFO
Package Type DIP; DIP24
View Details
3 suppliers
SDRAM - 1882660P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 512000 kbits
View Details
Memory - MYX4DDR364M16JTBG - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Access Time 1.07 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
View Details