Etron Technology, Inc. Memory EM6AA160TSE-4IG

Description
SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 66-TSOP II
Datasheet
Description
SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 66-TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - EM6AA160TSE-4IG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 66-TSOP II

SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 66-TSOP II

Buy Now
IC DRAM 256MBIT PAR 66TSOP II

IC DRAM 256MBIT PAR 66TSOP II

Supplier's Site Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
EM6AA160TSE-4IG
Integrated Circuits (ICs) - Memory - Memory EM6AA160TSE-4IG
IC DRAM 256MBIT PAR 66TSOP II

IC DRAM 256MBIT PAR 66TSOP II

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM6AA160TSE-4IG EM6AA160TSE-4IG EM6AA160TSE-4IG
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.7000 ns 0.7000 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5SP128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 1024 kbits
View Details
Memory - JM38510/23113BFA - Quarktwin Technology Ltd.
View Details
2 suppliers
Memory - 8 611 200 785 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers