Etron Technology, Inc. Memory EM6AA160TSE-4IG

Description
IC DRAM 256MBIT PAR 66TSOP II
Datasheet
Description
IC DRAM 256MBIT PAR 66TSOP II
Datasheet

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Company
Product
Description
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IC DRAM 256MBIT PAR 66TSOP II

IC DRAM 256MBIT PAR 66TSOP II

Supplier's Site Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
EM6AA160TSE-4IG
Integrated Circuits (ICs) - Memory - Memory EM6AA160TSE-4IG
IC DRAM 256MBIT PAR 66TSOP II

IC DRAM 256MBIT PAR 66TSOP II

Supplier's Site
Memory - EM6AA160TSE-4IG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 66-TSOP II

SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 66-TSOP II

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Technical Specifications

  Lingto Electronic Limited Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM6AA160TSE-4IG EM6AA160TSE-4IG EM6AA160TSE-4IG
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.7000 ns 0.7000 ns
Density 256000 kbits 256000 kbits 256000 kbits
Data Rate 250 MHz
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