Etron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory EM6AA160TSE-4IG

Description
IC DRAM 256MBIT PAR 66TSOP II
Datasheet
Description
IC DRAM 256MBIT PAR 66TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
EM6AA160TSE-4IG
Integrated Circuits (ICs) - Memory - Memory EM6AA160TSE-4IG
IC DRAM 256MBIT PAR 66TSOP II

IC DRAM 256MBIT PAR 66TSOP II

Supplier's Site
Memory - EM6AA160TSE-4IG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 66-TSOP II

SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 66-TSOP II

Buy Now
IC DRAM 256MBIT PAR 66TSOP II

IC DRAM 256MBIT PAR 66TSOP II

Supplier's Site Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM6AA160TSE-4IG EM6AA160TSE-4IG EM6AA160TSE-4IG
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 250 MHz
Cycle Time 15 ns
Density 256000 kbits 256000 kbits 256000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 593995-001-00 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - 27S185DM/B - Lingto Electronic Limited
Rochester Electronics
View Details
2 suppliers
CD40105B CMOS 4-Bit-by-16-Word FIFO Register - CD40105BE - Texas Instruments
Specs
Memory Category FIFO
Package Type PDIP,SO,TSSOP
View Details
5 suppliers
Flash Memory - 1882568 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details