The 2N5114 is a P-channel JFET designed for analog switching and chopper applications, with a 30V gate-to-source breakdown voltage and typical on-resistance of 75 Ω at 0V gate bias. It is available in TO-18, TO-92, and SOT23 packages, with the TO-18 variant being hermetically sealed. The device operates across a junction temperature range of -55°C to 125°C and meets RoHS compliance. The molded plastic packages are UL 94 V-0 rated. Maximum power dissipation is 500 mW, with continuous gate current limited to 50 mA.
JFETs JFET P-Channel 30V Low Noise Product overview: 2N5114 from InterFET is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V. Search-friendly keywords include transistor, BJT, switching, amplification, P-Channel, 30V, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-2N5114 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 288-2N5114 |
| Product Name | P-Channel 30V Bipolar Transistor |
| Package Type | Bulk |
