EPC Space Single FETs, MOSFETs JANSH2N7681UFGC

JANSH2N7681UFGC is a 200 V enhancement-mode gallium nitride (GaN) FET designed for radiation-hardened space applications. It is packaged in an FSMD-G case and rated for a total ionizing dose of 1000 kRad, single event effects immunity up to 84 MeV·cm²/mg, and neutron tolerance up to 1 × 10¹⁵ neutrons/cm². The device maintains pre-radiation performance under low dose rates of 100 mRad/sec and has a drain-source on-resistance of 14 mΩ, a gate-source voltage of +6 V, -4 V, and a maximum drain current of 20 A. Power dissipation is rated at 81 W. The part is built to meet space-grade reliability standards and is part of a QPL-series offering under qualification, with JEDEC-compliant packaging.