EPC Space Single FETs, MOSFETs JANSH2N7680UFGC

Radiation-hardened enhancement-mode gallium nitride FETs for space and harsh environments, available in FSMD-G package, with a 100 V drain-source breakdown voltage, 1.55 °C/W thermal resistance, 5 mΩ drain-source on-resistance, 90 A continuous drain current, 57 A pulsed drain current, and 81 W power dissipation. Rated for total ionizing dose up to 1000 kRad, single event effects up to 84 MeV·mg/cm², and neutron fluence up to 1 × 10¹⁵ neutrons/cm². Meets JANS qualification pending and operates with a gate-source voltage tolerance of +6 V, -4 V.