EPC Space Single FETs, MOSFETs JANSH2N7679UFDC

JANSH2N7679UFDC is a radiation-hardened enhancement-mode gallium nitride FET designed for space and harsh environments, featuring a 40 V drain-source voltage, 5 A continuous drain current, and an on-resistance of 5 mΩ at 25 °C. It is packaged in FSMD-D and meets total ionizing dose tolerance of 1000 kRad, single event effect immunity up to 84 MeV·cm²/mg, and neutron fluence tolerance up to 1 × 10¹⁵ n/cm². The device supports low-dose-rate operation at 100 mRad/sec and maintains pre-radiation specifications. It belongs to a QPL series of GaN FETs with JEDEC qualification pending, and shares thermal resistance of 1.89 °C/W and power dissipation of 66 W with other variants in the series.