EPC Space Single FETs, MOSFETs FBG20N18BSH

The FBG20N18BSH is a radiation-hardened, enhancement-mode GaN HEMT power switch designed for space and high-reliability applications, featuring a compact hermetic FSMD-B surface-mount package. It has a 200 V drain-to-source voltage rating, 18 A continuous drain current, and a maximum on-resistance of 30 mΩ at 25°C. The device is immune to total ionizing dose up to 1 Mrad and neutron exposure up to 4 × 10¹⁵ neutrons/cm², with single-event effect immunity up to 83.2 MeV·cm²/mg. It includes a source sense pin and operates from -55°C to +150°C junction temperature. Thermal resistance from junction to case is 4.82 °C/W and junction to ambient is 56 °C/W.