EPC Space Single FETs, MOSFETs FBG20N04ASH

The FBG20N04ASH is a radiation-hardened eGaN® power HEMT designed for satellite, avionics, and deep space applications, featuring a hermetic FSMD-A surface mount package measuring 3.30 mm x 1.88 mm. It is rated for a 200 V drain-to-source voltage and continuous drain current of 4 A at 25°C, with a maximum on-resistance of 130 mΩ at 4 A and 5 V gate-source voltage. The device is immune to total ionizing doses up to 1 Mrad and neutron fluences up to 4 × 10¹⁵ neutrons/cm², with single-event effect immunity up to 83.2 MeV·cm²/mg. Thermal resistance from junction to case is 15.9 °C/W, and junction temperature operates from -55°C to +150°C. The device meets MIL-STD-750 for radiation testing and is classified as ESD Class 1A.