EPC Space Single FETs, MOSFETs FBG10N30BC

The FBG10N30BC is a 100 V, 30 A radiation-hardened eGaN® power HEMT designed for satellite, avionics, and deep space applications. It is housed in a compact hermetic FSMD-B surface mount package and features a source sense pin. The device exhibits a maximum drain-to-source on-state resistance of 16 mΩ at 25°C, a total gate charge of up to 11 nC, and operates with a junction temperature range of -55°C to +150°C. It is immune to both low and high dose rate total ionizing radiation and complies with ESD Class 1A standards. Weight is 0.135 g.