EPC Space Single FETs, MOSFETs FBG10N05ASH

The FBG10N05ASH is a 100 V, 5 A radiation-hardened enhancement-mode GaN HEMT designed for space and high-reliability applications, featuring a hermetic FSMD-A surface mount package measuring 3.30 mm by 1.88 mm. It operates with a gate-source voltage range of -4 V to +6 V and supports junction temperatures from -55°C to +150°C. The device has a maximum on-resistance of 58 mΩ at 5 A and 5 V gate-source bias, and is immune to total ionizing doses up to 1 Mrad and neutron fluences up to 4 × 10¹⁵ n/cm². It exhibits single-event effect immunity for linear energy transfer up to 83.2 MeV·cm²/mg and meets MIL-STD-750 for radiation validation. The package includes a source sense pin for precise measurement, and the device is ESD Class 1A compliant.