EPC Space Single FETs, MOSFETs FBG04N08AC

The FBG04N08AC is a radiation-hardened, 40 V, 8 A eGaN® power HEMT designed for satellite and deep space applications, housed in a compact hermetic FSMD-A surface-mount package weighing 0.068 g. It features a source sense pin, logic level gate drive, and maintains specification up to 1 Mrad total ionizing dose with ON, OFF, and no-bias conditions. The device is immune to single event effects up to 83.2 MeV·cm²/mg and neutron fluence of 4 × 10¹⁵ neutrons/cm². It has a drain-source on-resistance of 24 to 28 mΩ at 8 A and 5 V gate voltage, with junction temperature operation from -55°C to +150°C and thermal resistance from junction to case of 12.08 °C/W. ESD classification is 1B.