EPC Space Single FETs, MOSFETs EPC7030MC

The EPC7030MC is a radiation-hardened, 300 V, 50 A eGaN® power FET in a compact hermetic FSMD-M surface mount package measuring 8.99 mm by 6.32 mm. It features a dual gate, source sense pin, and operates with a junction temperature range of -55°C to +150°C. The device has a maximum drain-to-source resistance of 26 mΩ at 25°C, a gate-source voltage rating of +6 V / -4 V, and handles a single-pulse drain current of 150 A for 300 μs. It is immune to total ionizing dose (TID) effects and meets ESD Class 1B. Thermal resistance from junction to case is 0.94°C/W, and junction-to-ambient is 35°C/W when mounted on a specified PCB. The part is qualified for space and high-reliability applications and complies with RoHS and MIL-STD-750.3471 for gate charge measurement.