EPC Space Single FETs, MOSFETs EPC7019GSH

The EPC7019GSH is a 40 V radiation-hardened eGaN® power HEMT for space and high-reliability applications. It uses a hermetic FSMD-G surface mount package measuring 7.8 mm by 8 mm with dual gate and source sense pins. The device supports a continuous drain current of 90 A and a single-pulse drain current of 360 A for 300 μs. It has a maximum on-resistance of 4.5 mΩ at 25°C and 90 A, with a gate-source threshold voltage of 0.8 to 2.5 V and a temperature coefficient of ±2.0 mV/°C. Immune to total ionizing doses up to 1 Mrad and neutron fluences up to 4 × 10¹⁵ neutrons/cm², it maintains performance up to 83.2 MeV·cm²/mg LET. It operates from -55°C to +150°C, meets MIL-STD-750 for radiation validation, and is classified as ESD Class 1B.