EPC Space Single FETs, MOSFETs EPC7019DC

Description
GANFET N-CH 40V 82A 4SMD
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Description
GANFET N-CH 40V 82A 4SMD
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Datasheet
Datasheet Summary
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The EPC7019DC is a radiation-hardened, 40 V, 82 A, 5.0 mΩ eGaN® power HEMT designed for satellite, avionics, and deep-space applications. It features a compact hermetic FSMD-D surface-mount package measuring 8.03 mm × 5.77 mm and weighs 0.160 grams. The device has a junction-to-case thermal resistance of 2.05 °C/W and operates from -55 °C to +150 °C. It includes a source-sense pin for precision switching and is rated for 1B ESD Class. The part is immune to total ionizing dose effects and meets the requirements for high-reliability space systems.

Datasheet Summary
Powered by GS/AI

The EPC7019DC is a radiation-hardened, 40 V, 82 A, 5.0 mΩ eGaN® power HEMT designed for satellite, avionics, and deep-space applications. It features a compact hermetic FSMD-D surface-mount package measuring 8.03 mm × 5.77 mm and weighs 0.160 grams. The device has a junction-to-case thermal resistance of 2.05 °C/W and operates from -55 °C to +150 °C. It includes a source-sense pin for precision switching and is rated for 1B ESD Class. The part is immune to total ionizing dose effects and meets the requirements for high-reliability space systems.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 4107-EPC7019DC-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
4107-EPC7019DC-ND
Single FETs, MOSFETs 4107-EPC7019DC-ND
GANFET N-CH 40V 82A 4SMD

GANFET N-CH 40V 82A 4SMD

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 4107-EPC7019DC-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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