The EPC7019DC is a radiation-hardened, 40 V, 82 A, 5.0 mΩ eGaN® power HEMT designed for satellite, avionics, and deep-space applications. It features a compact hermetic FSMD-D surface-mount package measuring 8.03 mm × 5.77 mm and weighs 0.160 grams. The device has a junction-to-case thermal resistance of 2.05 °C/W and operates from -55 °C to +150 °C. It includes a source-sense pin for precision switching and is rated for 1B ESD Class. The part is immune to total ionizing dose effects and meets the requirements for high-reliability space systems.
GANFET N-CH 40V 82A 4SMD
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 4107-EPC7019DC-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |