EPC Space Single FETs, MOSFETs EPC7018GSH

The EPC7018GSH is a 100 V, 80 A radiation-hardened eGaN® power HEMT designed for satellite and deep-space applications, featuring a hermetic FSMD-G surface-mount package measuring 7.8 mm by 8 mm with dual gates and a source sense pin. It has a drain-source on-resistance of 4 to 6 mΩ at 25°C and 80 A, a gate-source threshold voltage of 0.8 to 2.5 V, and thermal resistance of 1.84 °C/W from junction to case. The device is immune to 1 Mrad total ionizing dose with bias and exhibits single-event effect immunity up to 82.3 MeV·cm²/mg LET. It operates from -55°C to 150°C junction temperature and meets MIL-STD-750 for radiation validation. ESD rating is Class 1B.