The EPC7014UBSH is a radiation-hardened, 60 V, 1 A enhancement-mode GaN HEMT designed for space and high-reliability applications, featuring a UB surface-mount package measuring 2.92 mm to 3.23 mm in length, 2.41 mm to 2.72 mm in width, and 0.91 mm to 2.11 mm in height. It operates with a junction temperature range of -55°C to +150°C and exhibits a maximum on-resistance of 580 mΩ at 25°C with VGS = 5 V. The device is immune to 1 Mrad total ionizing dose, hardened to 4 × 10¹⁵ neutrons/cm², and tolerates single-event effects up to 83.2 MeV·cm²/mg. It meets the AEC-Q200 standard and contains no wire bonds for enhanced reliability. The device is classified as ESD Class 1A.
GANFET N-CH 60V 1A 4UB
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 4107-EPC7014UBSH-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |