EPC Space Single FETs, MOSFETs EPC7014UBSH

Description
GANFET N-CH 60V 1A 4UB
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Description
GANFET N-CH 60V 1A 4UB
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Datasheet
Datasheet Summary
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The EPC7014UBSH is a radiation-hardened, 60 V, 1 A enhancement-mode GaN HEMT designed for space and high-reliability applications, featuring a UB surface-mount package measuring 2.92 mm to 3.23 mm in length, 2.41 mm to 2.72 mm in width, and 0.91 mm to 2.11 mm in height. It operates with a junction temperature range of -55°C to +150°C and exhibits a maximum on-resistance of 580 mΩ at 25°C with VGS = 5 V. The device is immune to 1 Mrad total ionizing dose, hardened to 4 × 10¹⁵ neutrons/cm², and tolerates single-event effects up to 83.2 MeV·cm²/mg. It meets the AEC-Q200 standard and contains no wire bonds for enhanced reliability. The device is classified as ESD Class 1A.

Datasheet Summary
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The EPC7014UBSH is a radiation-hardened, 60 V, 1 A enhancement-mode GaN HEMT designed for space and high-reliability applications, featuring a UB surface-mount package measuring 2.92 mm to 3.23 mm in length, 2.41 mm to 2.72 mm in width, and 0.91 mm to 2.11 mm in height. It operates with a junction temperature range of -55°C to +150°C and exhibits a maximum on-resistance of 580 mΩ at 25°C with VGS = 5 V. The device is immune to 1 Mrad total ionizing dose, hardened to 4 × 10¹⁵ neutrons/cm², and tolerates single-event effects up to 83.2 MeV·cm²/mg. It meets the AEC-Q200 standard and contains no wire bonds for enhanced reliability. The device is classified as ESD Class 1A.

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Single FETs, MOSFETs - 4107-EPC7014UBSH-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
4107-EPC7014UBSH-ND
Single FETs, MOSFETs 4107-EPC7014UBSH-ND
GANFET N-CH 60V 1A 4UB

GANFET N-CH 60V 1A 4UB

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 4107-EPC7014UBSH-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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