EPC Space Single FETs, MOSFETs EPC7004BSH

The EPC7004BSH is a radiation-hardened 100 V, 46 A eGaN® power FET designed for satellite, avionics, and deep space applications. It features a compact hermetic FSMD-B surface mount package weighing 0.135 g, with a source sense pin and drain-to-source on-resistance of 16 mΩ typ at 5 V gate drive. It is immune to total ionizing doses up to 1 Mrad and maintains specifications after neutron exposure up to 4 × 10¹⁵ neutrons/cm², with single event effect immunity up to 83.2 MeV·cm²/mg. Operating junction temperature ranges from -55°C to +150°C, and thermal resistance from junction to case is 2.25 °C/W.