EPC Space Single FETs, MOSFETs EPC7003ASH

The EPC7003ASH is a radiation-hardened, 100 V, 10 A enhancement-mode GaN transistor in a compact hermetic FSMD-A surface mount package weighing 0.068 g. It features a source-sense pin, logic-level gate drive, and is immune to total ionizing doses up to 1 Mrad gamma radiation and neutron fluences up to 4 × 10¹⁵ neutrons/cm². The device is hardened against single event effects up to an LET of 83.2 MeV·cm²/mg and maintains low on-resistance (42-58 mΩ) and low gate charge (0.5-1.2 nC) under radiation. It operates from -55°C to +150°C junction temperature with junction-to-case thermal resistance of 12.08 °C/W.