EPC Space Single FETs, MOSFETs EPC7001BC

Description
GANFET N-CH 40V 50A 4FSMD-B
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Description
GANFET N-CH 40V 50A 4FSMD-B
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Datasheet
Datasheet Summary
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The EPC7001BC is a 40 V, 50 A radiation-hardened GaN power HEMT designed for satellite and deep space applications, housed in a compact hermetic FSMD-B surface-mount package weighing 0.135 g. It features a low on-resistance of 11 mΩ at 50 A and 5 V gate-source voltage, a total gate charge of 12 nC, and operates across a junction temperature range of -55°C to +150°C. The device is immune to both low and high dose rate total ionizing radiation and includes a source sense pin for improved switching performance. It meets ESD Class 1B and is rated for 260°C package mounting surface temperature.

Datasheet Summary
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The EPC7001BC is a 40 V, 50 A radiation-hardened GaN power HEMT designed for satellite and deep space applications, housed in a compact hermetic FSMD-B surface-mount package weighing 0.135 g. It features a low on-resistance of 11 mΩ at 50 A and 5 V gate-source voltage, a total gate charge of 12 nC, and operates across a junction temperature range of -55°C to +150°C. The device is immune to both low and high dose rate total ionizing radiation and includes a source sense pin for improved switching performance. It meets ESD Class 1B and is rated for 260°C package mounting surface temperature.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 4107-EPC7001BC-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
4107-EPC7001BC-ND
Single FETs, MOSFETs 4107-EPC7001BC-ND
GANFET N-CH 40V 50A 4FSMD-B

GANFET N-CH 40V 50A 4FSMD-B

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 4107-EPC7001BC-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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