The EPC7001BC is a 40 V, 50 A radiation-hardened GaN power HEMT designed for satellite and deep space applications, housed in a compact hermetic FSMD-B surface-mount package weighing 0.135 g. It features a low on-resistance of 11 mΩ at 50 A and 5 V gate-source voltage, a total gate charge of 12 nC, and operates across a junction temperature range of -55°C to +150°C. The device is immune to both low and high dose rate total ionizing radiation and includes a source sense pin for improved switching performance. It meets ESD Class 1B and is rated for 260°C package mounting surface temperature.
GANFET N-CH 40V 50A 4FSMD-B
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 4107-EPC7001BC-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |