Features:
High temperature metallurgically bonded construction
1.0 Ampere operation at Ta=75C with no thermal runaway
Typical IR less than 0.1 uA
Hermetically sealed package
Glass passivated cavity-free junction
Elite Semiconductor Products, Inc.
Done
Description
Features:
High temperature metallurgically bonded construction
1.0 Ampere operation at Ta=75C with no thermal runaway
Typical IR less than 0.1 uA
Hermetically sealed package
Glass passivated cavity-free junction
Features:
High temperature metallurgically bonded construction
1.0 Ampere operation at Ta=75C with no thermal runaway
Typical IR less than 0.1 uA
Hermetically sealed package
Glass passivated cavity-free junction
Features:
High temperature metallurgically bonded construction
1.0 Ampere operation at Ta=75C with no thermal runaway
