Allied Electronics, Inc. Photodiode; 400 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 180 pF (Typ.); -20 deg 70136748

Description
0.40 V (Min.) Open circuit Voltage, -20 to +75 °C Operating Temperature, Photodiode Low capacitance Fast switching time Low leakage current The planar photodiode is designed to maximize response in the infrared spectrum of received energy. The photodiode is supplied on a ceramic base with an IR transmissive epoxy dome package that rejects visible light wavelengths.
  • Photodiode; 400 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 180 pF (Typ.); -20 deg - 70136748 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Description
0.40 V (Min.) Open circuit Voltage, -20 to +75 °C Operating Temperature, Photodiode Low capacitance Fast switching time Low leakage current The planar photodiode is designed to maximize response in the infrared spectrum of received energy. The photodiode is supplied on a ceramic base with an IR transmissive epoxy dome package that rejects visible light wavelengths.

Suppliers

Company
Product
Description
Supplier Links
Photodiode; 400 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 180 pF (Typ.); -20 deg - 70136748 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
Photodiode; 400 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 180 pF (Typ.); -20 deg
70136748
Photodiode; 400 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 180 pF (Typ.); -20 deg 70136748
0.40 V (Min.) Open circuit Voltage, -20 to +75 °C Operating Temperature, Photodiode Low capacitance Fast switching time Low leakage current The planar photodiode is designed to maximize response in the infrared spectrum of received energy. The photodiode is supplied on a ceramic base with an IR transmissive epoxy dome package that rejects visible light wavelengths.

0.40 V (Min.) Open circuit Voltage, -20 to +75 °C Operating Temperature, Photodiode

  • Low capacitance
  • Fast switching time
  • Low leakage current
    The planar photodiode is designed to maximize response in the infrared spectrum of received energy. The photodiode is supplied on a ceramic base with an IR transmissive epoxy dome package that rejects visible light wavelengths.
Supplier's Site

Technical Specifications

  Allied Electronics, Inc.
Product Category Photodiodes
Product Number 70136748
Product Name Photodiode; 400 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 180 pF (Typ.); -20 deg
Spectral Response Range 700 to 1100 nm (7000 to 11000 Å)
Unlock Full Specs
to access all available technical data

Similar Products

Si photodiodes - S1226-44BK - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Si photodiodes
S1226-44BK
Specs
Photodiode Spectral Response UV; Visible
Spectral Response Range 320 to 1000 nm (3200 to 10000 Å)
Peak Sensitivity Wavelength 720 nm (7200 Å)
View Details
Integrating Sphere Detector, Diverging Beam, 2.0 in., 800-1650 nm - 819D-IG-2-CAL2 - Newport MKS
Newport MKS
Integrating Sphere Detector, Diverging Beam, 2.0 in., 800-1650 nm
819D-IG-2-CAL2
Specs
Spectral Response Range 800 to 1650 nm (8000 to 16500 Å)
View Details
Photodiodes - 2121833 - RS Components, Ltd.
RS Components, Ltd.
Photodiodes
2121833
Specs
Photodiode Spectral Response IR
Peak Sensitivity Wavelength 5000 nm (50000 Å)
Photodiode Package Ceramic
View Details
Micropac Industries, Inc.
61056
Specs
Photodiode Type PN Photodiode; PIN Photodiode (optional feature)
Photodiode Spectral Response UV; Visible; IR
Spectral Response Range 290 to 1200 nm (2900 to 12000 Å)
View Details