Electro Optical Components, Inc. GaP UV Photodiode Detectors JEP 5 & 5-365

Silicon carbide SiC photodetectors / photodiodes have a spectral response of approximately 210 – 380 nm and are not sensitive to UV radiation outside this region. This makes them ideal detectors in certain applications for monitoring the UV spectrum without the need for solar rejection filters. SiC photodetectors are extremely durable and have been proven to withstand prolonged UV exposure in production quantities in many applications. No other detector material (e.g. Si, Ti02, GaN or diamond) can offer the unique advantages of IFW’s silicon carbide detectors (SiC) in UV-applications: intrinsic spectral response is limited to the range of 200 – 400nm and no additional blocking of unwanted visual and IR-range of radiation is necessary proven outstanding long term stability under high doses of UV-C- radiation (up to 1000Wm-2) excellent temperature stability, (temperature coefficient Tk<-0,06%/K), stable long term operation of up to +150°C Silicon carbide SiC photodiodes / photodetectors are offered in TO-18 and TO-5 packages with or without integrated filters for UVA, UVB, UVC, UVBC and UVBC2. Hybrid units with integrated amplifiers are also available. To avoid damaging photodiodes during soldering and cleaning, consider using sockets. SiC photodiodes features & types High responsivity – 0.13 A/W peak UV radiation hardness Cost effective standard sizes Low temperature coefficient Built in Preamplifiers optional UV A, B, C, BC & BC2 filters available Screened detectors with 0% output above 400 nm Quadrant detector available for beam focus monitoring Gallium Phosphate (GaP) Detectors with output up to 400 nm Diffuser lens option available JIC 119-22 is equivalent to the discontinued Perkin Elmer UV10.T2E.10F and JIC 119-22L to the discontinued UV10.T2E.10L Applications Water treatment Flame detection Spectroscopy Food inspection UVA, UVB, UVC, UVBC & UVBC2 measurement UV exposure measurement (e.g. erythema)