Efficient Power Conversion Corporation Single FETs, MOSFETs EPC2619ENGRT

The EPC2619 is an enhancement mode gallium nitride (GaN) power transistor designed for high-efficiency switching applications such as DC-DC converters, sync rectification, and motor drives. It is supplied in a passivated die form with solder bars and has a die size of 2.5 x 1.5 mm. The device has a maximum drain-to-source voltage of 100 V, a maximum continuous drain current of 29 A, and a maximum pulsed drain current of 164 A. The drain-source on-resistance is 4.2 mΩ maximum at 25°C with a gate drive voltage of 5 V. Thermal resistance from junction-to-case is 1 °C/W and junction-to-board is 2.6 °C/W. The gate threshold voltage ranges from 0.8 V to 2.5 V, and the device has zero reverse recovery charge. The top of the die is electrically connected to the source.