Efficient Power Conversion Corporation FET, MOSFET Arrays EPC2110ENGRT

The EPC2110 is a dual common-source enhancement-mode gallium nitride (GaN) power transistor in passivated die form with solder bumps, designed for high-frequency DC-DC conversion, wireless power transfer, and synchronous rectification. The die measures 1.35 x 1.35 mm and is rated for a drain-to-source voltage of 120 V and a continuous drain current of 3.4 A at 25°C. It has a typical on-resistance of 110 mΩ, a total gate charge of 1.1 nC, and a thermal resistance junction-to-case of 3 °C/W. The device operates from -40°C to 150°C and meets the MSL 1 moisture sensitivity level per IPC/JEDEC standards.