The EPC2106 is a half-bridge enhancement-mode gallium nitride (GaN) power transistor integrated circuit composed of two N-channel FETs, each rated for 100 V drain-to-source voltage and 1.7 A continuous drain current. It is supplied in a passivated die form with solder bumps, featuring a die size of 1.35 x 1.35 mm. The device has a typical on-resistance of 70 mΩ at 25°C and a total gate charge of up to 900 pC. Thermal resistance from junction to case is 3 °C/W, and junction-to-board is 30 °C/W. It operates from -40°C to 150°C and meets RoHS compliance. The device is intended for high-frequency DC-DC conversion and Class-D audio applications.
Mosfet Array 2 N-Channel (Half Bridge) 100V 1.7A Surface Mount Die
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 917-EPC2106ENGRTR-ND |
| Product Name | FET, MOSFET Arrays |
| Transistor Technology / Material | Gallium Nitride |
