Efficient Power Conversion Corporation FET, MOSFET Arrays EPC2105ENGRT

The EPC2105 is an enhancement-mode gallium nitride (GaN) power transistor in a half-bridge configuration, supplied as a passivated die with solder bumps for surface mount applications. It integrates two transistors: a 10 A, 14.5 mΩ high-side FET and a 40 A, 3.6 mΩ low-side FET, both rated for 80 V continuous drain-to-source voltage. The die measures 6.05 mm by 2.3 mm. Thermal resistance from junction to case is 0.4 °C/W for the high-side device and 2.5 °C/W from junction to board. Maximum operating and storage temperatures range from -40 °C to 150 °C. The device is designed for high-frequency DC-DC conversion with low on-state losses and minimal switching losses due to zero reverse recovery charge.