Efficient Power Conversion Corporation FET, MOSFET Arrays EPC2104ENGRT

The EPC2104 is an enhancement-mode gallium nitride (GaN) power transistor in a half-bridge configuration, designed for high-frequency DC-DC conversion and motor drive applications. It is supplied as a passivated die with solder bumps, measuring 6.05 x 2.3 mm, and features a drain-to-source voltage rating of 100 V and a continuous drain current of 30 A at 25°C. The device has a typical on-resistance of 6.8 mΩ and a thermal resistance from junction-to-case of 0.3 °C/W. It operates over a junction temperature range of -40°C to 150°C and meets MSL 1 moisture sensitivity standards per IPC/JEDEC. The die is mounted with solder bumps facing down and is intended for surface mount assemblies on a copper pad.