Dongguan Pingjing Microelectronics Technology Co., Ltd. Transistors PJM04DN30PA

Description
30V 4A 1.2W 38mΩ@10V,4A 1.5V@250uA 2 N-Channel SOP-8 MOSFETs ROHS
  • Transistors - PJM04DN30PA - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 4A 1.2W 38mΩ@10V,4A 1.5V@250uA 2 N-Channel SOP-8 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - PJM04DN30PA - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
PJM04DN30PA
Transistors PJM04DN30PA
30V 4A 1.2W 38mΩ@10V,4A 1.5V@250uA 2 N-Channel SOP-8 MOSFETs ROHS

30V 4A 1.2W 38mΩ@10V,4A 1.5V@250uA 2 N-Channel SOP-8 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number PJM04DN30PA
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KS201 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KS201
View Details
0.03 - 4.0 GHz, 30 Watt, 32 V GaN RF Transistor - TGF3021-SM - Qorvo
Qorvo
0.03 - 4.0 GHz, 30 Watt, 32 V GaN RF Transistor
TGF3021-SM
Specs
Transistor Technology / Material GaN
Package Type QFN
View Details
2 suppliers
IGBT MODULE,1 PHASE,FR11,460A,600V CLASS - SK-H1-QOUT-E460 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
IGBT MODULE,1 PHASE,FR11,460A,600V CLASS
SK-H1-QOUT-E460
Specs
Transistor Type IGBT
View Details
IGBT Module - 4775114 - Radwell International
Fuji Electric Corp. of America
IGBT Module
2DI150M-120
Specs
Transistor Type IGBT
View Details