P-Channel enhancement mode MOSFET in SOT-23 (TO-236) package for commercial and industrial applications, rated at 20 V drain-source voltage, 2.8 A continuous drain current, and 1.25 W power dissipation with a maximum junction temperature of 150°C. On-state resistance is less than 100 mΩ at 4.5 V gate-source voltage, with fast switching times and low gate charge. The device complies with RoHS and UL 94 V-0, is rated for MSL 1, and is AEC-Q101 compliant in the -Q variant.
MOSFET P-CH 20V 2.8A SOT23-3
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 4878-MMFTP2301TR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | P-Channel |