N-Channel enhancement mode MOSFET in SOT-23 package for DC/DC conversion, signal processing, and logic level shifting, rated for 150 V drain-source voltage and 1 A continuous drain current with a maximum on-state resistance of 1.2 Ω at 10 V gate-source voltage. Power dissipation is 960 mW, junction temperature range is -55°C to 150°C, and the device is AEC-Q101 qualified. Package is taped and reeled, with UL 94 V-0 case material and soldering compliance at 260°C for 10 seconds.
MOSFET N-CH 150V 1A SOT23-3
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 4878-MMFTN4520-AQTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
