Diotec Semiconductor Single FETs, MOSFETs MMFTN3422ASK

N-channel enhancement mode MOSFET for power switching in battery-powered devices and voltage converters, packaged in SOT-23 (TO-236) with a drain-source voltage rating of 30 V, continuous drain current of 4.2 A, and on-state resistance of less than 42 mΩ at 10 V gate-source voltage. Maximum junction temperature is 150°C, power dissipation is 1250 mW, and the device is ESD protected with a gate-source ESD rating of ±2 kV. It is certified to RoHS, UL 94 V-0, and AEC-Q101 compliant when designated with the -Q suffix. The component supports a pulse drain current up to 20 A and features low gate charge and fast switching times.