MMFTN123K is an N-channel enhancement mode MOSFET for signal processing and logic level conversion in commercial applications, housed in an SOT-23 (TO-236) package. It has a drain-source voltage rating of 100 V, a continuous drain current of 170 mA, and a maximum power dissipation of 900 mW when mounted on a ceramic substrate. The gate-source threshold voltage ranges from 1.0 V to 3.0 V, and the drain-source on-state resistance is up to 6 Ω at 10 V gate-source voltage. The device is ESD protected with a gate ESD rating of ±2 kV, complies with RoHS, and has a junction temperature range of -55°C to +150°C. Weight is approximately 0.01 g, and the case material meets UL 94V-0 standards. Soldering is rated for 260°C for 10 seconds, and the part is supplied taped on a 7-inch reel with MSL 1 rating.
MOSFET N-CH 100V 170MA SOT23-3
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 4878-MMFTN123KTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |