Diotec Semiconductor Single FETs, MOSFETs DIW170SIC750

The DIW170SIC750 is a silicon carbide (SiC) MOSFET designed for high-voltage switching applications such as EV charging stations, solar inverters, and battery chargers. It is packaged in a TO-247-3L case with a maximum drain-source voltage of 1700 V and a continuous drain current of 7.5 A at 25°C. The device has a drain-source on-state resistance of less than 0.85 Ω at 25°C and a power dissipation of 84 W. It supports a junction temperature range of -55°C to +175°C, features fast switching times, low gate charge, and is 100% avalanche tested. The part is AEC-Q101 compliant when marked with the -Q suffix and meets RoHS, REACH, and UL 94 V-0 standards.