Diotec Semiconductor Single FETs, MOSFETs DIW170SIC070

The DIW170SIC070 is a silicon carbide (SiC) MOSFET designed for high-voltage switching applications such as DC/DC converters, power supplies, and electric drives. It comes in a TO-247 package, with a drain-source voltage rating of 1700 V, a continuous drain current of 70 A at 25°C, and a maximum power dissipation of 455 W. The on-state resistance is less than 60 mΩ at 25°C, rising to 109 mΩ at 175°C, and the junction temperature range is -55°C to +175°C. The device features low gate charge, fast switching times, and is 100% avalanche tested with an avalanche rating. It is compliant with AEC-Q101 for automotive-grade variants and meets RoHS, REACH, and Conflict Minerals requirements. Thermal resistance from junction to case is 0.33 K/W.