Diotec Semiconductor Single FETs, MOSFETs DIW012N65

N-Channel Power MOSFET with 650 V drain-source voltage, 12 A continuous drain current at 75°C, and a maximum on-state resistance of 190 mΩ, housed in a TO-247 package. It has a power dissipation rating of 125 W, a junction temperature range of -55°C to 150°C, and an avalanche energy rating of 988 mJ. The device is 100% avalanche tested and meets AEC-Q101 compliance for suffix -Q variants. It complies with RoHS and REACH standards. Thermal resistance from junction to case is less than 1 K/W. Package weight is approximately 6 g, and case material is UL 94 V-0 rated.