Diotec Semiconductor Single FETs, MOSFETs DIJ2A7N90

N-Channel Power MOSFET in ITO-220AB package, rated for 900 V drain-source voltage, 2.7 A continuous drain current at 25°C, and 65.7 W power dissipation, with RDS(on) below 3.4 Ω and a maximum junction temperature of 150°C. The device complies with RoHS and UL 94 V-0, and the -Q variant is AEC-Q101 compliant. It features low gate charge, fast switching, and avalanche capability of 174 mJ.