Diotec Semiconductor Single FETs, MOSFETs DIJ2A3N65

N-Channel power MOSFET rated for 650 V drain-source voltage and 2.3 A continuous drain current at 25°C, with a maximum on-state resistance of 2.6 Ω and power dissipation of 30 W. Packaged in an ITO-220 case with a junction temperature range of -55°C to 150°C. Features avalanche energy rating of 173 mJ, low gate charge of 13 nC, and complies with RoHS, REACH, and AEC-Q101 for variants with -Q suffix. Thermal resistance from junction to case is less than 4.17 K/W.