The DIF120SIC053-AQ is a silicon carbide (SiC) MOSFET designed for high-efficiency power conversion in applications such as EV charging stations, solar inverters, and battery chargers. It is packaged in a TO-247-4L case with a weight of approximately 6 g and meets UL 94 V-0 for flammability. The device has a drain-source voltage rating of 1200 V, a continuous drain current of 68 A at 25°C, and an on-state resistance of less than 53 mΩ at 25°C. It supports a maximum junction temperature of 175°C and has a thermal resistance from junction to case of 0.44 K/W. The part is AEC-Q101 qualified, is RoHS compliant, and features a Kelvin source for reduced gate noise and fast switching. Switching losses and gate charge are optimized for high-frequency operation.
SICFET N-CH 1200V 65A TO-247-4
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 4878-DIF120SIC053-AQ-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |