Diotec Semiconductor Single FETs, MOSFETs DIF065SIC020

The DIF065SIC020 is a silicon carbide (SiC) MOSFET designed for high-efficiency power conversion in applications such as EV charging stations and solar inverters. It is packaged in a TO-247-4L case with a maximum drain-source voltage of 650 V and a continuous drain current of 150 A at 25°C. The device exhibits a drain-source on-state resistance below 20 mΩ at 25°C and a maximum junction temperature of 175°C. Power dissipation is rated at 550 W, with thermal resistance from junction to case of 0.38 K/W. The part features a Kelvin source for reduced gate noise and fast switching, with a total gate charge of 236 nC. It meets RoHS, REACH, and conflict mineral requirements, and is AEC-Q101 compliant in variants with the -Q suffix. The case material is UL 94 V-0 rated, and mounting adheres to 260°C/10s soldering conditions.