N-Channel power MOSFET with a drain-source voltage rating of 650 V and continuous drain current of 7.5 A at 25°C, housed in a TO-263AB (D2PAK) package. It has a maximum on-state resistance of 430 mΩ at V₀₃=10 V and I₀=4 A, a maximum power dissipation of 62.5 W, and avalanche energy rating of 174 mJ. The junction temperature range is -55°C to +150°C, with thermal resistance junction-to-case less than 2 K/W. The device is AEC-Q101 compliant when designated with suffix -Q and qualified with suffix -AQ. It is RoHS compliant and meets UL 94 V-0 for case material.
MOSFET N-CH 650V 7.5A TO-263-3
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 4878-DI7A5N65D2KTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |