Diotec Semiconductor Single FETs, MOSFETs DI7A5N65D2K-AQ

N-channel power MOSFET in TO-263AB (D2PAK) package, rated for 650 V drain-source voltage and 7.5 A continuous drain current at 25°C, with a maximum on-state resistance of 430 mΩ and power dissipation of 62.5 W. It features avalanche capability with 174 mJ single-pulse energy, low gate charge of 18.4 nC, and fast switching times. The device is AEC-Q101 qualified, meets RoHS standards, has an operating junction temperature range of -55°C to 150°C, and is housed in a UL 94 V-0 rated package. Thermal resistance from junction to case is less than 2 K/W.