Diotec Semiconductor FET, MOSFET Arrays DI052N04PQ2-AQ

Dual N-channel power MOSFET in a QFN5x6 package rated for 40 V drain-source voltage and 52 A continuous drain current at 25°C, with RDS(on) < 4.7 mΩ at 10 V gate drive and power dissipation of 25 W. The device features avalanche capability with 123.5 mJ single-pulse energy, logic-level gate drive, and low gate charge of 48 nC. It is AEC-Q101 qualified, RoHS compliant, and meets UL 94 V-0 flammability rating. Thermal resistance from junction to case is less than 5 K/W, and thermal resistance from junction to ambient is less than 60 K/W when mounted on 645 mm² copper pads. Package is taped and reeled, with a weight of approximately 0.1 g.