Diotec Semiconductor Single FETs, MOSFETs DI050P02PT

The DI050P02PT is a P-channel power MOSFET in a QFN3x3 package, designed for load switching and battery-powered applications. It has a drain-source voltage rating of -20 V and a continuous drain current of -50 A at 25°C. The on-state resistance is specified at 7.6 mΩ to 10 mΩ at 10 V gate-source voltage and 15 A drain current. Power dissipation is 35.7 W at 25°C, with a maximum junction temperature of 150°C. The device meets AEC-Q101 compliance when ordered with the -Q suffix and is RoHS compliant. The package has a low profile and a thermal resistance from junction to case of less than 3.5 K/W when mounted on a 6.45 cm² copper pad. Its single pulse avalanche energy is 54 mJ at 33 A and 10 V. The total gate charge is 102 nC, and switching times are characterized with a 3.3 Ω gate resistor.